光催化去除水体中的有机污染物在污水净化领域具有广阔的应用前景。本研究分别采用水热法和固相法合成了四元BiMnVO₅可见光催化剂, 对催化剂的形貌结构和光学性质进行了表征分析, 并计算了其电子结构。结果表明, 水热法可以快速合成高纯度、高结晶度的BiMnVO₅。BiMnVO₅为直接带隙半导体, 禁带宽度为1.8 eV, 与第一性原理计算结果一致。态密度分析结果表明, 其光吸收可归因于从Mn3d/O2p到V3d的电子跃迁。光催化实验结果显示, 水热法合成的BiMnVO₅催化剂的催化活性最高, 可见光照射4 h后, 亚甲基蓝的降解率为98%。羟基自由基和光生空穴是光催化过程中的主要活性物。经过5次循环利用后,该催化剂对亚甲基蓝的降解率仍可达85%, 且形貌结构不变, 表现出良好的稳定性。

通过对各项不良改善措施的验证，总结出包括画素设计、制程、材料等可以对边缘彩点Mura进行有效改善的措施。将边缘彩点Mura不良发生率由35%降低到0，有效的提高了产品的良率。

Thin-film lithium niobate is a promising material platform for integrated nonlinear photonics, due to its high refractive index contrast with the excellent optical properties. However, the high refractive index contrast and correspondingly small mode field diameter limit the attainable coupling between the waveguide and fiber. In second harmonic generation processes, lack of efficient fiber-chip coupling schemes covering both the fundamental and second harmonic wavelengths has greatly limited the overall efficiency. We design and fabricate an ultra-broadband tri-layer edge coupler with a high coupling efficiency. The coupler allows efficient coupling of 1 dB / facet at 1550 nm and 3 dB / facet at 775 nm. This enables us to achieve an ultrahigh overall second harmonic generation normalized efficiency (fiber-to-fiber) of 1027 % W ^{- 1} cm ^{- 2} (on-chip second harmonic efficiency ∼3256 % W ^{- 1} cm ^{- 2}) in a 5-mm-long periodically-poled lithium niobate waveguide, which is two to three orders of magnitude higher than that in state-of-the-art devices.

光纤倒像器是微光夜视仪的核心元件，大口径光纤倒像器可实现宽视场、大视野、远视距的探测，但现有的扭转成型工艺无法制备出合格产品，采用旋转差速扭转成型工艺和双内炉加热设计相结合的工艺，最终制备出性能指标符合要求的大口径光纤导像器产品。测试结果显示，扭转区域的角度集中量减少为5.98 °/mm，对大口径光纤倒像器的边缘分辨率改善效果明显。

In this paper, a 16-bit 1MSPS foreground calibration successive approximation register analog-to-digital converter (SAR ADC) is developed by the CMOS 0.25 μm process. An on-chip all-digital foreground weights calibration technique integrating self-calibration weight measurement with PN port auto-balance technique is designed to improve the performance and lower the costs of the developed SAR ADC. The SAR ADC has a chip area of 2.7 × 2.4 mm², and consumes only 100 μW at the 2.5 V supply voltage with 100 KSPS. The INL and DNL are both less than 0.5 LSB.

Optical modulators have been and will continue to be essential devices for energy- and cost-efficient optical communication networks. Heterogeneous silicon and lithium niobate modulators have demonstrated promising performances of low optical loss, low drive voltage, and large modulation bandwidth. However, DC bias drift is a major drawback of optical modulators using lithium niobate as the active electro-optic material. Here, we demonstrate high-speed and bias-drift-free Mach–Zehnder modulators based on the heterogeneous silicon and lithium niobate platform. The devices combine stable thermo-optic DC biases in silicon and ultra-fast electro-optic modulation in lithium niobate, and exhibit a low insertion loss of 1.8 dB, a low half-wave voltage of 3 V, an electro-optic modulation bandwidth of at least 70 GHz, and modulation data rates up to 128 Gb/s.